Pavanello, Marcelo Antonio 
; Nicolett, Aparecido Sirley; Martino, João Antonio
Source: LATW 00: proceedings. Conference titles: IEEE Latin American Test Workshop. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
PAVANELLO, Marcelo Antonio e NICOLETT, Aparecido Sirley e MARTINO, João Antonio. Effective channel length and series resistence extraction error induced by the substrate in enhancement-mode SOI nMOSFETs. 2000, Anais.. Piscataway: IEEE/SBC, 2000. . Acesso em: 05 jun. 2024.APA
Pavanello, M. A., Nicolett, A. S., & Martino, J. A. (2000). Effective channel length and series resistence extraction error induced by the substrate in enhancement-mode SOI nMOSFETs. In LATW 00: proceedings. Piscataway: IEEE/SBC.NLM
Pavanello MA, Nicolett AS, Martino JA. Effective channel length and series resistence extraction error induced by the substrate in enhancement-mode SOI nMOSFETs. LATW 00: proceedings. 2000 ;[citado 2024 jun. 05 ]Vancouver
Pavanello MA, Nicolett AS, Martino JA. Effective channel length and series resistence extraction error induced by the substrate in enhancement-mode SOI nMOSFETs. LATW 00: proceedings. 2000 ;[citado 2024 jun. 05 ]
