Source: Resumo. Conference titles: Latin American Symposium on Nuclear Physics and Applications. Unidade: IF
Assunto: RAIOS X
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ABNT
SILVEIRA, Marcilei Aparecida Guazzelli da et al. Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries. 2011, Anais.. Quito: LASNPA, 2011. Disponível em: http://www.lasnpa-quito2011.org/abstract_export.php?id=49. Acesso em: 05 set. 2024.APA
Silveira, M. A. G. da, Medina, N. H., Added, N., Tabacniks, M. H., Santos, R. B., Cirne, K. H., et al. (2011). Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries. In Resumo. Quito: LASNPA. Recuperado de http://www.lasnpa-quito2011.org/abstract_export.php?id=49NLM
Silveira MAG da, Medina NH, Added N, Tabacniks MH, Santos RB, Cirne KH, Gimenez SP, Lima JAD, Seixas LE. Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries. [Internet]. Resumo. 2011 ;[citado 2024 set. 05 ] Available from: http://www.lasnpa-quito2011.org/abstract_export.php?id=49Vancouver
Silveira MAG da, Medina NH, Added N, Tabacniks MH, Santos RB, Cirne KH, Gimenez SP, Lima JAD, Seixas LE. Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries. [Internet]. Resumo. 2011 ;[citado 2024 set. 05 ] Available from: http://www.lasnpa-quito2011.org/abstract_export.php?id=49