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Artigo de periodico
Multiperiodic Spin Precession of the Optically Induced SpinPolarization in AlxGa1--xAs/AlAs Single Quantum Well (2020)
Ullah, Saeed ; Gusev, G M ; Bakarov, A K; Hernandez, Felix Guillermo Gonzalez
Source: Iranian Journal of Science and Technology, Transactions A: Science. Unidade: IF
Assunto: POÇOS QUÂNTICOS
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ABNT
ULLAH, Saeed et al. Multiperiodic Spin Precession of the Optically Induced SpinPolarization in AlxGa1--xAs/AlAs Single Quantum Well. Iranian Journal of Science and Technology, Transactions A: Science, 2020Tradução . . Disponível em: https://doi.org/10.1007/s40995-020-00842-2. Acesso em: 04 jun. 2024.
APA
Ullah, S., Gusev, G. M., Bakarov, A. K., & Hernandez, F. G. G. (2020). Multiperiodic Spin Precession of the Optically Induced SpinPolarization in AlxGa1--xAs/AlAs Single Quantum Well. Iranian Journal of Science and Technology, Transactions A: Science. doi:10.1007/s40995-020-00842-2
NLM
Ullah S, Gusev GM, Bakarov AK, Hernandez FGG. Multiperiodic Spin Precession of the Optically Induced SpinPolarization in AlxGa1--xAs/AlAs Single Quantum Well [Internet]. Iranian Journal of Science and Technology, Transactions A: Science. 2020 ;[citado 2024 jun. 04 ] Available from: https://doi.org/10.1007/s40995-020-00842-2
Vancouver
Ullah S, Gusev GM, Bakarov AK, Hernandez FGG. Multiperiodic Spin Precession of the Optically Induced SpinPolarization in AlxGa1--xAs/AlAs Single Quantum Well [Internet]. Iranian Journal of Science and Technology, Transactions A: Science. 2020 ;[citado 2024 jun. 04 ] Available from: https://doi.org/10.1007/s40995-020-00842-2
Artigo de periodico
Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well (2020)
Yaroshevich, A S; Kvon, Z D; Gusev, G M ; Mikhailov, N N
Source: JETP Letters. Unidade: IF
Assunto: POÇOS QUÂNTICOS
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ABNT
YAROSHEVICH, A S et al. Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well. JETP Letters, v. 111, n. 2, p. 121–125, 2020Tradução . . Disponível em: https://doi.org/10.1134/S0021364020020113. Acesso em: 04 jun. 2024.
APA
Yaroshevich, A. S., Kvon, Z. D., Gusev, G. M., & Mikhailov, N. N. (2020). Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well. JETP Letters, 111( 2), 121–125. doi:10.1134/S0021364020020113
NLM
Yaroshevich AS, Kvon ZD, Gusev GM, Mikhailov NN. Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well [Internet]. JETP Letters. 2020 ;111( 2): 121–125.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1134/S0021364020020113
Vancouver
Yaroshevich AS, Kvon ZD, Gusev GM, Mikhailov NN. Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well [Internet]. JETP Letters. 2020 ;111( 2): 121–125.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1134/S0021364020020113
Artigo de periodico
Experimental analysis of the spin–orbit coupling dependence on the drift velocity of a spin packet (2020)
Kawahala, Nícolas Massarico; Moraes, Flavio Campopiano Dias de ; Gusev, G M ; Bakarov, A K; Hernandez, Felix Guillermo Gonzalez
Source: AIP Advances. Unidade: IF
Subjects: SPIN, POÇOS QUÂNTICOS
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ABNT
KAWAHALA, Nícolas Massarico et al. Experimental analysis of the spin–orbit coupling dependence on the drift velocity of a spin packet. AIP Advances, v. 10, n. 6, 2020Tradução . . Disponível em: https://doi.org/10.1063/5.0016108. Acesso em: 04 jun. 2024.
APA
Kawahala, N. M., Moraes, F. C. D. de, Gusev, G. M., Bakarov, A. K., & Hernandez, F. G. G. (2020). Experimental analysis of the spin–orbit coupling dependence on the drift velocity of a spin packet. AIP Advances, 10( 6). doi:10.1063/5.0016108
NLM
Kawahala NM, Moraes FCD de, Gusev GM, Bakarov AK, Hernandez FGG. Experimental analysis of the spin–orbit coupling dependence on the drift velocity of a spin packet [Internet]. AIP Advances. 2020 ; 10( 6):[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/5.0016108
Vancouver
Kawahala NM, Moraes FCD de, Gusev GM, Bakarov AK, Hernandez FGG. Experimental analysis of the spin–orbit coupling dependence on the drift velocity of a spin packet [Internet]. AIP Advances. 2020 ; 10( 6):[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/5.0016108
Artigo de periodico
Topological insulators based on HgTe (2020)
Kvon, Z D; Kozlov, D A; Olshanetsky, E B; Gusev, G M ; Mikhailov, N N; Dvoretsky, S A
Source: Physics Uspekhi. Unidade: IF
Assunto: POÇOS QUÂNTICOS
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ABNT
KVON, Z D et al. Topological insulators based on HgTe. Physics Uspekhi, v. 63, n. 7, p. 629-647, 2020Tradução . . Disponível em: https://doi.org/10.3367/UFNe.2019.10.038669. Acesso em: 04 jun. 2024.
APA
Kvon, Z. D., Kozlov, D. A., Olshanetsky, E. B., Gusev, G. M., Mikhailov, N. N., & Dvoretsky, S. A. (2020). Topological insulators based on HgTe. Physics Uspekhi, 63( 7), 629-647. doi:10.3367/UFNe.2019.10.038669
NLM
Kvon ZD, Kozlov DA, Olshanetsky EB, Gusev GM, Mikhailov NN, Dvoretsky SA. Topological insulators based on HgTe [Internet]. Physics Uspekhi. 2020 ; 63( 7): 629-647.[citado 2024 jun. 04 ] Available from: https://doi.org/10.3367/UFNe.2019.10.038669
Vancouver
Kvon ZD, Kozlov DA, Olshanetsky EB, Gusev GM, Mikhailov NN, Dvoretsky SA. Topological insulators based on HgTe [Internet]. Physics Uspekhi. 2020 ; 63( 7): 629-647.[citado 2024 jun. 04 ] Available from: https://doi.org/10.3367/UFNe.2019.10.038669
Artigo de periodico
Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators (2019)
Rahim, Abdur; Gusev, G M ; Kvonc, Z D; Olshanetsky, E B; Mikhailov, N N; Dvoretsky, S A
Source: Microelectronic Engineering. Unidade: IF
Subjects: PROPRIEDADES DOS MATERIAIS, NANOTECNOLOGIA
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ABNT
RAHIM, Abdur et al. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators. Microelectronic Engineering, v. 206, p. 55-59, 2019Tradução . . Disponível em: https://doi.org/10.1016/j.mee.2018.12.011. Acesso em: 04 jun. 2024.
APA
Rahim, A., Gusev, G. M., Kvonc, Z. D., Olshanetsky, E. B., Mikhailov, N. N., & Dvoretsky, S. A. (2019). Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators. Microelectronic Engineering, 206, 55-59. doi:10.1016/j.mee.2018.12.011
NLM
Rahim A, Gusev GM, Kvonc ZD, Olshanetsky EB, Mikhailov NN, Dvoretsky SA. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators [Internet]. Microelectronic Engineering. 2019 ; 206 55-59.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1016/j.mee.2018.12.011
Vancouver
Rahim A, Gusev GM, Kvonc ZD, Olshanetsky EB, Mikhailov NN, Dvoretsky SA. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators [Internet]. Microelectronic Engineering. 2019 ; 206 55-59.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1016/j.mee.2018.12.011
Trabalho de evento-resumo
Speeding spins: Analysis of the drift velocity on the operation of a spin transistor (2019)
Kawahala, Nícolas Massarico; Moraes, F C D; Gusev, G M; Hernández, Félix Guillermo González; Bakarov, A K
Source: Abstracts. Conference titles: Encontro de Outono da Sociedade Brasileira de Física - EOSBF. Unidade: IF
Assunto: SPINTRÔNICA
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ABNT
KAWAHALA, Nícolas Massarico et al. Speeding spins: Analysis of the drift velocity on the operation of a spin transistor. 2019, Anais.. São Paulo: Sociedade Brasileira de Física - SBF, 2019. . Acesso em: 04 jun. 2024.
APA
Kawahala, N. M., Moraes, F. C. D., Gusev, G. M., Hernández, F. G. G., & Bakarov, A. K. (2019). Speeding spins: Analysis of the drift velocity on the operation of a spin transistor. In Abstracts. São Paulo: Sociedade Brasileira de Física - SBF.
NLM
Kawahala NM, Moraes FCD, Gusev GM, Hernández FGG, Bakarov AK. Speeding spins: Analysis of the drift velocity on the operation of a spin transistor. Abstracts. 2019 ;[citado 2024 jun. 04 ]
Vancouver
Kawahala NM, Moraes FCD, Gusev GM, Hernández FGG, Bakarov AK. Speeding spins: Analysis of the drift velocity on the operation of a spin transistor. Abstracts. 2019 ;[citado 2024 jun. 04 ]
Trabalho de evento-resumo
Nonlocal transport near charge neutrality point in Two-dimensional topological insulator (2013)
Rahim, Ahmad Ali Abdul; Gusev, G M; Kvon, Z D; Mikhailov, N N; Dvoretsky, S A
Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Subjects: SEMICONDUTORES, PROPRIEDADES DOS MATERIAIS
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ABNT
RAHIM, Ahmad Ali Abdul et al. Nonlocal transport near charge neutrality point in Two-dimensional topological insulator. 2013, Anais.. São Carlos: UFSCar, 2013. Disponível em: http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=75. Acesso em: 04 jun. 2024.
APA
Rahim, A. A. A., Gusev, G. M., Kvon, Z. D., Mikhailov, N. N., & Dvoretsky, S. A. (2013). Nonlocal transport near charge neutrality point in Two-dimensional topological insulator. In . São Carlos: UFSCar. Recuperado de http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=75
NLM
Rahim AAA, Gusev GM, Kvon ZD, Mikhailov NN, Dvoretsky SA. Nonlocal transport near charge neutrality point in Two-dimensional topological insulator [Internet]. 2013 ;[citado 2024 jun. 04 ] Available from: http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=75
Vancouver
Rahim AAA, Gusev GM, Kvon ZD, Mikhailov NN, Dvoretsky SA. Nonlocal transport near charge neutrality point in Two-dimensional topological insulator [Internet]. 2013 ;[citado 2024 jun. 04 ] Available from: http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=75
Trabalho de evento-resumo
Microwave-induced magnetooscillatons in multilayer systems: Double and Triple quantum wells (2013)
Gusev, G M
Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
GUSEV, G M. Microwave-induced magnetooscillatons in multilayer systems: Double and Triple quantum wells. 2013, Anais.. São Carlos: UFSCar, 2013. Disponível em: http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=2. Acesso em: 04 jun. 2024.
APA
Gusev, G. M. (2013). Microwave-induced magnetooscillatons in multilayer systems: Double and Triple quantum wells. In . São Carlos: UFSCar. Recuperado de http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=2
NLM
Gusev GM. Microwave-induced magnetooscillatons in multilayer systems: Double and Triple quantum wells [Internet]. 2013 ;[citado 2024 jun. 04 ] Available from: http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=2
Vancouver
Gusev GM. Microwave-induced magnetooscillatons in multilayer systems: Double and Triple quantum wells [Internet]. 2013 ;[citado 2024 jun. 04 ] Available from: http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=2
Artigo de periodico
Circularly polarized photoluminescence as a probe of density of states in 'GA''AS'/'AL''GA''AS' quantum hall bilayers (2012)
Pusep, Yuri A. ; Smirnov, D; Bakarov, A K; Santos, L Fernandes dos; Gusev, G M
Source: Physical Review Letters. Unidade: IF
Subjects: FOTOLUMINESCÊNCIA, FERROMAGNETISMO, MAGNETISMO
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ABNT
PUSEP, Yuri A. et al. Circularly polarized photoluminescence as a probe of density of states in 'GA''AS'/'AL''GA''AS' quantum hall bilayers. Physical Review Letters, v. 109, n. 4, p. 046802, 2012Tradução . . Disponível em: https://doi.org/10.1103/PhysRevLett.109.046802. Acesso em: 04 jun. 2024.
APA
Pusep, Y. A., Smirnov, D., Bakarov, A. K., Santos, L. F. dos, & Gusev, G. M. (2012). Circularly polarized photoluminescence as a probe of density of states in 'GA''AS'/'AL''GA''AS' quantum hall bilayers. Physical Review Letters, 109( 4), 046802. doi:10.1103/PhysRevLett.109.046802
NLM
Pusep YA, Smirnov D, Bakarov AK, Santos LF dos, Gusev GM. Circularly polarized photoluminescence as a probe of density of states in 'GA''AS'/'AL''GA''AS' quantum hall bilayers [Internet]. Physical Review Letters. 2012 ;109( 4): 046802.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1103/PhysRevLett.109.046802
Vancouver
Pusep YA, Smirnov D, Bakarov AK, Santos LF dos, Gusev GM. Circularly polarized photoluminescence as a probe of density of states in 'GA''AS'/'AL''GA''AS' quantum hall bilayers [Internet]. Physical Review Letters. 2012 ;109( 4): 046802.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1103/PhysRevLett.109.046802
Artigo de periodico
Magnetic field induced charge redistribution in artificially disordered quantum hall superlattices (2012)
Santos, L Fernandes dos ; Pusep, Yuri A. ; Bakarov, A K; Toropov, A I; Gusev, G M
Source: EPL : a letters journal exploring the frontiers of physics. Unidades: IFSC, IF
Assunto: CAMPO MAGNÉTICO
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ABNT
SANTOS, L Fernandes dos et al. Magnetic field induced charge redistribution in artificially disordered quantum hall superlattices. EPL : a letters journal exploring the frontiers of physics, v. 97, n. ja2012, p. 17010, 2012Tradução . . Disponível em: https://doi.org/10.1209/0295-5075/97/17010. Acesso em: 04 jun. 2024.
APA
Santos, L. F. dos, Pusep, Y. A., Bakarov, A. K., Toropov, A. I., & Gusev, G. M. (2012). Magnetic field induced charge redistribution in artificially disordered quantum hall superlattices. EPL : a letters journal exploring the frontiers of physics, 97( ja2012), 17010. doi:10.1209/0295-5075/97/17010
NLM
Santos LF dos, Pusep YA, Bakarov AK, Toropov AI, Gusev GM. Magnetic field induced charge redistribution in artificially disordered quantum hall superlattices [Internet]. EPL : a letters journal exploring the frontiers of physics. 2012 ;97( ja2012): 17010.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1209/0295-5075/97/17010
Vancouver
Santos LF dos, Pusep YA, Bakarov AK, Toropov AI, Gusev GM. Magnetic field induced charge redistribution in artificially disordered quantum hall superlattices [Internet]. EPL : a letters journal exploring the frontiers of physics. 2012 ;97( ja2012): 17010.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1209/0295-5075/97/17010
Artigo de periodico
Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field (2012)
Olshanetsky, E B; Kvon, Z D; Mikhailov, N M; Dvoretsky, S A; Gusev, G M
Source: JETP Letters. Unidade: IF
Assunto: MAGNETISMO
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ABNT
OLSHANETSKY, E B et al. Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field. JETP Letters, v. 96, n. 4, p. 251-254, 2012Tradução . . Disponível em: https://doi.org/10.1134/S0021364012160072. Acesso em: 04 jun. 2024.
APA
Olshanetsky, E. B., Kvon, Z. D., Mikhailov, N. M., Dvoretsky, S. A., & Gusev, G. M. (2012). Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field. JETP Letters, 96( 4), 251-254. doi:10.1134/S0021364012160072
NLM
Olshanetsky EB, Kvon ZD, Mikhailov NM, Dvoretsky SA, Gusev GM. Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field [Internet]. JETP Letters. 2012 ;96( 4): 251-254.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1134/S0021364012160072
Vancouver
Olshanetsky EB, Kvon ZD, Mikhailov NM, Dvoretsky SA, Gusev GM. Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field [Internet]. JETP Letters. 2012 ;96( 4): 251-254.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1134/S0021364012160072
Artigo de periodico
Unconventional Hall effect near charge neutrality point in a two-dimensional electron-hole system (2012)
Raichev, O. E.; Gusev, G M ; Olshanetsky, E. B.; Kvon, Z. D.; Mikhailov, N. N.; Dvoretsky, S. A.; Portal, J. C.
Source: Physical Review B. Unidade: IF
Subjects: EFEITO HALL, ESTRUTURA DOS MATERIAIS, MATERIAIS NANOESTRUTURADOS
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ABNT
RAICHEV, O. E. et al. Unconventional Hall effect near charge neutrality point in a two-dimensional electron-hole system. Physical Review B, v. 86, n. 15, p. 15532/01-15532/08, 2012Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.86.155320. Acesso em: 04 jun. 2024.
APA
Raichev, O. E., Gusev, G. M., Olshanetsky, E. B., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., & Portal, J. C. (2012). Unconventional Hall effect near charge neutrality point in a two-dimensional electron-hole system. Physical Review B, 86( 15), 15532/01-15532/08. doi:10.1103/PhysRevB.86.155320
NLM
Raichev OE, Gusev GM, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA, Portal JC. Unconventional Hall effect near charge neutrality point in a two-dimensional electron-hole system [Internet]. Physical Review B. 2012 ;86( 15): 15532/01-15532/08.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1103/PhysRevB.86.155320
Vancouver
Raichev OE, Gusev GM, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA, Portal JC. Unconventional Hall effect near charge neutrality point in a two-dimensional electron-hole system [Internet]. Physical Review B. 2012 ;86( 15): 15532/01-15532/08.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1103/PhysRevB.86.155320
Artigo de periodico
Classical magnetoresistance of a ballistic electron gas constrained to non-planar topographies in a lattice of antidots under tilted magnetic field (2012)
Sotomayor, M N; Cabral, L A; Davila, L Y A; Gusev, G M
Source: Physica E: Low-dimensional Systems and Nanostructures. Unidade: IF
Assunto: CAMPO MAGNÉTICO
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ABNT
SOTOMAYOR, M N et al. Classical magnetoresistance of a ballistic electron gas constrained to non-planar topographies in a lattice of antidots under tilted magnetic field. Physica E: Low-dimensional Systems and Nanostructures, v. 45, p. 135-145, 2012Tradução . . Disponível em: https://doi.org/10.1016/j.physe.2012.07.018. Acesso em: 04 jun. 2024.
APA
Sotomayor, M. N., Cabral, L. A., Davila, L. Y. A., & Gusev, G. M. (2012). Classical magnetoresistance of a ballistic electron gas constrained to non-planar topographies in a lattice of antidots under tilted magnetic field. Physica E: Low-dimensional Systems and Nanostructures, 45, 135-145. doi:10.1016/j.physe.2012.07.018
NLM
Sotomayor MN, Cabral LA, Davila LYA, Gusev GM. Classical magnetoresistance of a ballistic electron gas constrained to non-planar topographies in a lattice of antidots under tilted magnetic field [Internet]. Physica E: Low-dimensional Systems and Nanostructures. 2012 ;45 135-145.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1016/j.physe.2012.07.018
Vancouver
Sotomayor MN, Cabral LA, Davila LYA, Gusev GM. Classical magnetoresistance of a ballistic electron gas constrained to non-planar topographies in a lattice of antidots under tilted magnetic field [Internet]. Physica E: Low-dimensional Systems and Nanostructures. 2012 ;45 135-145.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1016/j.physe.2012.07.018
Artigo de periodico
Transport in disordered two-dimensional topological insulators (2011)
Gusev, G M ; Kvon, Z D; Shegai, O A; Mikhailov, N N; Dvoretsky, S A; Portal, J C
Source: PHYSICAL REVIEW D. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
GUSEV, G M et al. Transport in disordered two-dimensional topological insulators. PHYSICAL REVIEW D, v. 84, n. 12, p. 121302, 2011Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.84.121302. Acesso em: 04 jun. 2024.
APA
Gusev, G. M., Kvon, Z. D., Shegai, O. A., Mikhailov, N. N., Dvoretsky, S. A., & Portal, J. C. (2011). Transport in disordered two-dimensional topological insulators. PHYSICAL REVIEW D, 84( 12), 121302. doi:10.1103/PhysRevB.84.121302
NLM
Gusev GM, Kvon ZD, Shegai OA, Mikhailov NN, Dvoretsky SA, Portal JC. Transport in disordered two-dimensional topological insulators [Internet]. PHYSICAL REVIEW D. 2011 ;84( 12): 121302.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1103/PhysRevB.84.121302
Vancouver
Gusev GM, Kvon ZD, Shegai OA, Mikhailov NN, Dvoretsky SA, Portal JC. Transport in disordered two-dimensional topological insulators [Internet]. PHYSICAL REVIEW D. 2011 ;84( 12): 121302.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1103/PhysRevB.84.121302
Trabalho de evento-resumo
Energy spectra of a charge-tunable open quantum ring (2011)
Hernandez, F G G; Gusev, G M; Z. D. Kvon; Plotnikov, A Y; Portal, J C
Source: Resumo. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Assunto: ESPECTROS
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ABNT
HERNANDEZ, F G G et al. Energy spectra of a charge-tunable open quantum ring. 2011, Anais.. Juiz de Fora: UFJF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0016-1.pdf. Acesso em: 04 jun. 2024.
APA
Hernandez, F. G. G., Gusev, G. M., Z. D. Kvon,, Plotnikov, A. Y., & Portal, J. C. (2011). Energy spectra of a charge-tunable open quantum ring. In Resumo. Juiz de Fora: UFJF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0016-1.pdf
NLM
Hernandez FGG, Gusev GM, Z. D. Kvon, Plotnikov AY, Portal JC. Energy spectra of a charge-tunable open quantum ring [Internet]. Resumo. 2011 ;[citado 2024 jun. 04 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0016-1.pdf
Vancouver
Hernandez FGG, Gusev GM, Z. D. Kvon, Plotnikov AY, Portal JC. Energy spectra of a charge-tunable open quantum ring [Internet]. Resumo. 2011 ;[citado 2024 jun. 04 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0016-1.pdf
Artigo de periodico
Fractional quantum hall effect in second subband of a 2DES (2011)
Duarte, C A; Silva, E C F ; Gusev, G M ; Bakarov, A K; Wiedmann, S; Portal, J C
Source: EPL : a letters journal exploring the frontiers of physics. Unidade: IF
Assunto: EFEITO HALL
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ABNT
DUARTE, C A et al. Fractional quantum hall effect in second subband of a 2DES. EPL : a letters journal exploring the frontiers of physics, v. 94, n. 3, p. 37010, 2011Tradução . . Disponível em: https://doi.org/10.1209/0295-5075/94/37010. Acesso em: 04 jun. 2024.
APA
Duarte, C. A., Silva, E. C. F., Gusev, G. M., Bakarov, A. K., Wiedmann, S., & Portal, J. C. (2011). Fractional quantum hall effect in second subband of a 2DES. EPL : a letters journal exploring the frontiers of physics, 94( 3), 37010. doi:10.1209/0295-5075/94/37010
NLM
Duarte CA, Silva ECF, Gusev GM, Bakarov AK, Wiedmann S, Portal JC. Fractional quantum hall effect in second subband of a 2DES [Internet]. EPL : a letters journal exploring the frontiers of physics. 2011 ;94( 3): 37010.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1209/0295-5075/94/37010
Vancouver
Duarte CA, Silva ECF, Gusev GM, Bakarov AK, Wiedmann S, Portal JC. Fractional quantum hall effect in second subband of a 2DES [Internet]. EPL : a letters journal exploring the frontiers of physics. 2011 ;94( 3): 37010.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1209/0295-5075/94/37010
Trabalho de evento-resumo
Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well (2011)
Tabata, A; Basseto Jr, C A Z; Cavalcante, J S; Oliveira, J B B; Silva, E C F da; Gusev, G M; Lamas, T E
Source: Resumo. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TABATA, A et al. Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. 2011, Anais.. Juiz de Fora: UFJF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0025-1.pdf. Acesso em: 04 jun. 2024.
APA
Tabata, A., Basseto Jr, C. A. Z., Cavalcante, J. S., Oliveira, J. B. B., Silva, E. C. F. da, Gusev, G. M., & Lamas, T. E. (2011). Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. In Resumo. Juiz de Fora: UFJF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0025-1.pdf
NLM
Tabata A, Basseto Jr CAZ, Cavalcante JS, Oliveira JBB, Silva ECF da, Gusev GM, Lamas TE. Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well [Internet]. Resumo. 2011 ;[citado 2024 jun. 04 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0025-1.pdf
Vancouver
Tabata A, Basseto Jr CAZ, Cavalcante JS, Oliveira JBB, Silva ECF da, Gusev GM, Lamas TE. Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well [Internet]. Resumo. 2011 ;[citado 2024 jun. 04 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0025-1.pdf
Trabalho de evento-resumo
Subband energy levels of 'IN' IND.0,75''GA' IND. 0,25''AS'/'IN' IND. 0,75''AL' IND. 0,25''AS' single square quantum well (2011)
Anghinoni, B; Mamani, N C; Gusev, G M; Quivy, A A
Source: Resumo. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Assunto: SPIN
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ANGHINONI, B et al. Subband energy levels of 'IN' IND.0,75''GA' IND. 0,25''AS'/'IN' IND. 0,75''AL' IND. 0,25''AS' single square quantum well. 2011, Anais.. Juiz de Fora: UFJF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0099-1.pdf. Acesso em: 04 jun. 2024.
APA
Anghinoni, B., Mamani, N. C., Gusev, G. M., & Quivy, A. A. (2011). Subband energy levels of 'IN' IND.0,75''GA' IND. 0,25''AS'/'IN' IND. 0,75''AL' IND. 0,25''AS' single square quantum well. In Resumo. Juiz de Fora: UFJF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0099-1.pdf
NLM
Anghinoni B, Mamani NC, Gusev GM, Quivy AA. Subband energy levels of 'IN' IND.0,75''GA' IND. 0,25''AS'/'IN' IND. 0,75''AL' IND. 0,25''AS' single square quantum well [Internet]. Resumo. 2011 ;[citado 2024 jun. 04 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0099-1.pdf
Vancouver
Anghinoni B, Mamani NC, Gusev GM, Quivy AA. Subband energy levels of 'IN' IND.0,75''GA' IND. 0,25''AS'/'IN' IND. 0,75''AL' IND. 0,25''AS' single square quantum well [Internet]. Resumo. 2011 ;[citado 2024 jun. 04 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0099-1.pdf
Relatorio tecnico
Evidence for zero-differential resistance states in electronic bilayers (2011)
Gusev, G M; Raichev, O E; S. Wiedmann; Portal, J C; Bakarov, A K
Unidade: IF
Assunto: BAIXA TEMPERATURA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUSEV, G M et al. Evidence for zero-differential resistance states in electronic bilayers. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: http://arxiv.org/PS_cache/arxiv/pdf/1101/1101.5104v1.pdf. Acesso em: 04 jun. 2024. , 2011
APA
Gusev, G. M., Raichev, O. E., S. Wiedmann,, Portal, J. C., & Bakarov, A. K. (2011). Evidence for zero-differential resistance states in electronic bilayers. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de http://arxiv.org/PS_cache/arxiv/pdf/1101/1101.5104v1.pdf
NLM
Gusev GM, Raichev OE, S. Wiedmann, Portal JC, Bakarov AK. Evidence for zero-differential resistance states in electronic bilayers [Internet]. 2011 ;[citado 2024 jun. 04 ] Available from: http://arxiv.org/PS_cache/arxiv/pdf/1101/1101.5104v1.pdf
Vancouver
Gusev GM, Raichev OE, S. Wiedmann, Portal JC, Bakarov AK. Evidence for zero-differential resistance states in electronic bilayers [Internet]. 2011 ;[citado 2024 jun. 04 ] Available from: http://arxiv.org/PS_cache/arxiv/pdf/1101/1101.5104v1.pdf
Artigo de periodico
Microwave-induced hall resistance in bilayer electron systems (2011)
Wiedmann, S; Gusev, G M; Raichev, O E; Krämer, S; Bakarov, A K; Portal, J C
Source: Physical Review B. Unidade: IF
Assunto: FÍSICA DA MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
WIEDMANN, S et al. Microwave-induced hall resistance in bilayer electron systems. Physical Review B, v. 83, n. 19, p. 195317, 2011Tradução . . Disponível em: https://doi.org/10.1103/physrevb.83.195317. Acesso em: 04 jun. 2024.
APA
Wiedmann, S., Gusev, G. M., Raichev, O. E., Krämer, S., Bakarov, A. K., & Portal, J. C. (2011). Microwave-induced hall resistance in bilayer electron systems. Physical Review B, 83( 19), 195317. doi:10.1103/physrevb.83.195317
NLM
Wiedmann S, Gusev GM, Raichev OE, Krämer S, Bakarov AK, Portal JC. Microwave-induced hall resistance in bilayer electron systems [Internet]. Physical Review B. 2011 ;83( 19): 195317.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1103/physrevb.83.195317
Vancouver
Wiedmann S, Gusev GM, Raichev OE, Krämer S, Bakarov AK, Portal JC. Microwave-induced hall resistance in bilayer electron systems [Internet]. Physical Review B. 2011 ;83( 19): 195317.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1103/physrevb.83.195317

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