Fonseca, Fernando Josepetti 
; Andrade, Adnei Melges de ; Galloni, R
Source: Proceedings. Conference titles: Workshop on Materials Sciences and Physics of Non-Conventional Energy Sources. Unidade: EP
Assunto: SEMICONDUTORES
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ABNT
FONSECA, Fernando Josepetti e ANDRADE, Adnei Melges de e GALLONI, R. Determination of the optimal annealing temperature for ion implanted doping hydrogenated amorphous silicon. 1993, Anais.. Buenos Aires: Cnea, 1993. . Acesso em: 10 jun. 2024.APA
Fonseca, F. J., Andrade, A. M. de, & Galloni, R. (1993). Determination of the optimal annealing temperature for ion implanted doping hydrogenated amorphous silicon. In Proceedings. Buenos Aires: Cnea.NLM
Fonseca FJ, Andrade AM de, Galloni R. Determination of the optimal annealing temperature for ion implanted doping hydrogenated amorphous silicon. Proceedings. 1993 ;[citado 2024 jun. 10 ]Vancouver
Fonseca FJ, Andrade AM de, Galloni R. Determination of the optimal annealing temperature for ion implanted doping hydrogenated amorphous silicon. Proceedings. 1993 ;[citado 2024 jun. 10 ]
