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Parte de monografia/livro
Single-atom electrocatalysts for water splitting (2020)
Guimarães, Robson Raphael; Gonçalves, Josué Martins ; Björneholm, Olle; Araujo, C. Moyses ; Brito, Arnaldo Naves de ; Araki, Koiti
Source: Methods for Electrocatalysis. Unidade: IQ
Subjects: ELETROCATÁLISE, SÍNTESE QUÍMICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUIMARÃES, Robson Raphael et al. Single-atom electrocatalysts for water splitting. Methods for Electrocatalysis. Tradução . Cham: Springer, 2020. . . Acesso em: 03 nov. 2024.
APA
Guimarães, R. R., Gonçalves, J. M., Björneholm, O., Araujo, C. M., Brito, A. N. de, & Araki, K. (2020). Single-atom electrocatalysts for water splitting. In Methods for Electrocatalysis. Cham: Springer.
NLM
Guimarães RR, Gonçalves JM, Björneholm O, Araujo CM, Brito AN de, Araki K. Single-atom electrocatalysts for water splitting. In: Methods for Electrocatalysis. Cham: Springer; 2020. [citado 2024 nov. 03 ]
Vancouver
Guimarães RR, Gonçalves JM, Björneholm O, Araujo CM, Brito AN de, Araki K. Single-atom electrocatalysts for water splitting. In: Methods for Electrocatalysis. Cham: Springer; 2020. [citado 2024 nov. 03 ]
Artigo de periodico
X-ray photoelectron fingerprints of high-valence ruthenium−oxo complexes along the oxidation reaction pathway in an aqueous environment (2019)
Silva, José Luís; Unger, Isaak ; Matias, Tiago Araújo ; Franco, Leandro Rezende; Damas, Giane ; Costa, Luciano Tavares da ; Toledo, Kalil Cristhian Figueiredo ; Rocha, Tulio C. R; Brito, Arnaldo Naves de ; Saak, Clara Magdalena; Coutinho, Kaline ; Araki, Koiti ; Björneholm, Olle; Brena, Barbara; Araujo, C. Moyses
Source: Journal of Physical Chemistry Letters. Unidades: IF, IQ
Subjects: RAIOS X, ESPECTROSCOPIA FOTOELETRÔNICA, RUTÊNIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, José Luís et al. X-ray photoelectron fingerprints of high-valence ruthenium−oxo complexes along the oxidation reaction pathway in an aqueous environment. Journal of Physical Chemistry Letters, v. 10, p. 7636-7643 : + Supplementary materials ( S1-S12), 2019Tradução . . Disponível em: https://doi.org/10.1021/acs.jpclett.9b02756. Acesso em: 03 nov. 2024.
APA
Silva, J. L., Unger, I., Matias, T. A., Franco, L. R., Damas, G., Costa, L. T. da, et al. (2019). X-ray photoelectron fingerprints of high-valence ruthenium−oxo complexes along the oxidation reaction pathway in an aqueous environment. Journal of Physical Chemistry Letters, 10, 7636-7643 : + Supplementary materials ( S1-S12). doi:10.1021/acs.jpclett.9b02756
NLM
Silva JL, Unger I, Matias TA, Franco LR, Damas G, Costa LT da, Toledo KCF, Rocha TCR, Brito AN de, Saak CM, Coutinho K, Araki K, Björneholm O, Brena B, Araujo CM. X-ray photoelectron fingerprints of high-valence ruthenium−oxo complexes along the oxidation reaction pathway in an aqueous environment [Internet]. Journal of Physical Chemistry Letters. 2019 ; 10 7636-7643 : + Supplementary materials ( S1-S12).[citado 2024 nov. 03 ] Available from: https://doi.org/10.1021/acs.jpclett.9b02756
Vancouver
Silva JL, Unger I, Matias TA, Franco LR, Damas G, Costa LT da, Toledo KCF, Rocha TCR, Brito AN de, Saak CM, Coutinho K, Araki K, Björneholm O, Brena B, Araujo CM. X-ray photoelectron fingerprints of high-valence ruthenium−oxo complexes along the oxidation reaction pathway in an aqueous environment [Internet]. Journal of Physical Chemistry Letters. 2019 ; 10 7636-7643 : + Supplementary materials ( S1-S12).[citado 2024 nov. 03 ] Available from: https://doi.org/10.1021/acs.jpclett.9b02756
Artigo de periodico
Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN: Si (2002)
Araujo, C. Moyses; Fernandez, J. R. L.; Silva, A. Ferreira da; Pepe, I.; Leite, J. R.; Sernelius, Bo E.; Tabata, A.; Persson, C.; Ahuja, R.; As, D. J.; Schikora, D.; Lischka, K.
Source: Microelectronics Journal. Unidade: IF
Assunto: FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ARAUJO, C. Moyses et al. Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN: Si. Microelectronics Journal, v. 33, n. 4, p. 365-369, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(01)00133-1. Acesso em: 03 nov. 2024.
APA
Araujo, C. M., Fernandez, J. R. L., Silva, A. F. da, Pepe, I., Leite, J. R., Sernelius, B. E., et al. (2002). Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN: Si. Microelectronics Journal, 33( 4), 365-369. doi:10.1016/s0026-2692(01)00133-1
NLM
Araujo CM, Fernandez JRL, Silva AF da, Pepe I, Leite JR, Sernelius BE, Tabata A, Persson C, Ahuja R, As DJ, Schikora D, Lischka K. Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN: Si [Internet]. Microelectronics Journal. 2002 ; 33( 4): 365-369.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1016/s0026-2692(01)00133-1
Vancouver
Araujo CM, Fernandez JRL, Silva AF da, Pepe I, Leite JR, Sernelius BE, Tabata A, Persson C, Ahuja R, As DJ, Schikora D, Lischka K. Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN: Si [Internet]. Microelectronics Journal. 2002 ; 33( 4): 365-369.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1016/s0026-2692(01)00133-1

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