Ions incorporation and exchange effects in porous silicon (1993)
Fonte: Abstracts. Nome do evento: Brazilian School of Semiconductor Physics. Unidade: IFQSC
Assuntos: MATÉRIA CONDENSADA, FÍSICO-QUÍMICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MATVIENKO, B et al. Ions incorporation and exchange effects in porous silicon. 1993, Anais.. Sao Carlos: Usp/Ufscar, 1993. . Acesso em: 09 ago. 2024.APA
Matvienko, B., Basmaji, P., Grivickas, V., & Bernussi, A. A. (1993). Ions incorporation and exchange effects in porous silicon. In Abstracts. Sao Carlos: Usp/Ufscar.NLM
Matvienko B, Basmaji P, Grivickas V, Bernussi AA. Ions incorporation and exchange effects in porous silicon. Abstracts. 1993 ;[citado 2024 ago. 09 ]Vancouver
Matvienko B, Basmaji P, Grivickas V, Bernussi AA. Ions incorporation and exchange effects in porous silicon. Abstracts. 1993 ;[citado 2024 ago. 09 ]
