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Filtros : "FÍSICA" "Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, USA" Removidos: "Encontro Regional de Química" "MONOGRAFIA/LIVRO-ED/ORG" "NAVARRO, MARIA FIDELA DE LIMA" Limpar

Filtros

Artigo de periodico
"Ab initio" studies of hydrogen-enhanced oxygen diffusion in silicon (2000)
Capaz, R B; Assali, L. V. C. ; Kimerling, L C; Cho, K; Joannopoulos, J D
Source: Brazilian Journal of Physics. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CAPAZ, R B et al. "Ab initio" studies of hydrogen-enhanced oxygen diffusion in silicon. Brazilian Journal of Physics, v. 29, n. 4, p. 611-615, 2000Tradução . . Disponível em: https://doi.org/10.1590/s0103-97331999000400002. Acesso em: 13 jun. 2024.
APA
Capaz, R. B., Assali, L. V. C., Kimerling, L. C., Cho, K., & Joannopoulos, J. D. (2000). "Ab initio" studies of hydrogen-enhanced oxygen diffusion in silicon. Brazilian Journal of Physics, 29( 4), 611-615. doi:10.1590/s0103-97331999000400002
NLM
Capaz RB, Assali LVC, Kimerling LC, Cho K, Joannopoulos JD. "Ab initio" studies of hydrogen-enhanced oxygen diffusion in silicon [Internet]. Brazilian Journal of Physics. 2000 ; 29( 4): 611-615.[citado 2024 jun. 13 ] Available from: https://doi.org/10.1590/s0103-97331999000400002
Vancouver
Capaz RB, Assali LVC, Kimerling LC, Cho K, Joannopoulos JD. "Ab initio" studies of hydrogen-enhanced oxygen diffusion in silicon [Internet]. Brazilian Journal of Physics. 2000 ; 29( 4): 611-615.[citado 2024 jun. 13 ] Available from: https://doi.org/10.1590/s0103-97331999000400002
Artigo de periodico
"Ab Initio" studies of hydrogen=enhanced oxygen diffusion in silicon (1999)
Capaz, R. B.; Assali, L. V. C. ; Kimerling, L. C.; Cho, K.; Joannopoulos, J. D.
Source: Brazilian Journal of Physics. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CAPAZ, R. B. et al. "Ab Initio" studies of hydrogen=enhanced oxygen diffusion in silicon. Brazilian Journal of Physics, v. 29, n. 4, p. 611-615, 1999Tradução . . Disponível em: https://doi.org/10.1590/s0103-97331999000400002. Acesso em: 13 jun. 2024.
APA
Capaz, R. B., Assali, L. V. C., Kimerling, L. C., Cho, K., & Joannopoulos, J. D. (1999). "Ab Initio" studies of hydrogen=enhanced oxygen diffusion in silicon. Brazilian Journal of Physics, 29( 4), 611-615. doi:10.1590/s0103-97331999000400002
NLM
Capaz RB, Assali LVC, Kimerling LC, Cho K, Joannopoulos JD. "Ab Initio" studies of hydrogen=enhanced oxygen diffusion in silicon [Internet]. Brazilian Journal of Physics. 1999 ; 29( 4): 611-615.[citado 2024 jun. 13 ] Available from: https://doi.org/10.1590/s0103-97331999000400002
Vancouver
Capaz RB, Assali LVC, Kimerling LC, Cho K, Joannopoulos JD. "Ab Initio" studies of hydrogen=enhanced oxygen diffusion in silicon [Internet]. Brazilian Journal of Physics. 1999 ; 29( 4): 611-615.[citado 2024 jun. 13 ] Available from: https://doi.org/10.1590/s0103-97331999000400002

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