Source: Current Applied Physics. Unidade: IFSC
Subjects: ESPECTROSCOPIA RAMAN (ANÁLISE), FILMES FINOS
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ABNT
MENDES, A. C. et al. Raman spectroscopy analysis of structural photoinduced changers in Ge'S IND.2'+'Ga IND.2'+'O IND.3' thin films. Current Applied Physics, v. No 2010, n. 6, p. 1411-1415, 2010Tradução . . Disponível em: https://doi.org/10.1016/j.cap.2010.05.005. Acesso em: 11 jun. 2024.APA
Mendes, A. C., Maia, L. J. Q., Messaddeq, S. H., Messaddeq, Y., Zanatta, A. R., & Siu Li, M. (2010). Raman spectroscopy analysis of structural photoinduced changers in Ge'S IND.2'+'Ga IND.2'+'O IND.3' thin films. Current Applied Physics, No 2010( 6), 1411-1415. doi:10.1016/j.cap.2010.05.005NLM
Mendes AC, Maia LJQ, Messaddeq SH, Messaddeq Y, Zanatta AR, Siu Li M. Raman spectroscopy analysis of structural photoinduced changers in Ge'S IND.2'+'Ga IND.2'+'O IND.3' thin films [Internet]. Current Applied Physics. 2010 ; No 2010( 6): 1411-1415.[citado 2024 jun. 11 ] Available from: https://doi.org/10.1016/j.cap.2010.05.005Vancouver
Mendes AC, Maia LJQ, Messaddeq SH, Messaddeq Y, Zanatta AR, Siu Li M. Raman spectroscopy analysis of structural photoinduced changers in Ge'S IND.2'+'Ga IND.2'+'O IND.3' thin films [Internet]. Current Applied Physics. 2010 ; No 2010( 6): 1411-1415.[citado 2024 jun. 11 ] Available from: https://doi.org/10.1016/j.cap.2010.05.005
