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Filtros : "IFSC010" "McMaster University - Hamilton - Canada" "Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)" Removidos: "Fundamenta Mathematicae" "Kohayakawa, Yoshiharu" "Stochastic Processes and their Applications" Limpar

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  • Artigo de periodico

    Magnetic field effects on the valence band of AlGaAs and InGaAsP parabolic quantum wells (2023)

    Patricio, Marco Antonio Tito ; Villegas-Lelovsky, Leonardo ; Oliveira, Edson Rafael Cardozo de ; Marques, ‪Gilmar Eugenio; LaPierre, Ray ; Toropov, Alexander I.; Pusep, Yuri A.

    Source: Physical Review B. Unidade: IFSC

    Subjects: SPIN, POÇOS QUÂNTICOS, CAMPO ELETROMAGNÉTICO

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    • ABNT

      PATRICIO, Marco Antonio Tito et al. Magnetic field effects on the valence band of AlGaAs and InGaAsP parabolic quantum wells. Physical Review B, v. 108, n. 3, p. 035416-1-035416-9, 2023Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.108.035416. Acesso em: 19 jun. 2024.

    • APA

      Patricio, M. A. T., Villegas-Lelovsky, L., Oliveira, E. R. C. de, Marques, ‪G. E., LaPierre, R., Toropov, A. I., & Pusep, Y. A. (2023). Magnetic field effects on the valence band of AlGaAs and InGaAsP parabolic quantum wells. Physical Review B, 108( 3), 035416-1-035416-9. doi:10.1103/PhysRevB.108.035416

    • NLM

      Patricio MAT, Villegas-Lelovsky L, Oliveira ERC de, Marques ‪GE, LaPierre R, Toropov AI, Pusep YA. Magnetic field effects on the valence band of AlGaAs and InGaAsP parabolic quantum wells [Internet]. Physical Review B. 2023 ; 108( 3): 035416-1-035416-9.[citado 2024 jun. 19 ] Available from: https://doi.org/10.1103/PhysRevB.108.035416

    • Vancouver

      Patricio MAT, Villegas-Lelovsky L, Oliveira ERC de, Marques ‪GE, LaPierre R, Toropov AI, Pusep YA. Magnetic field effects on the valence band of AlGaAs and InGaAsP parabolic quantum wells [Internet]. Physical Review B. 2023 ; 108( 3): 035416-1-035416-9.[citado 2024 jun. 19 ] Available from: https://doi.org/10.1103/PhysRevB.108.035416

  • Artigo de periodico

    Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well (2019)

    Patricio, M. A. Tito; LaPierre, R. R.; Pusep, Yuri A.

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES

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    • ABNT

      PATRICIO, M. A. Tito e LAPIERRE, R. R. e PUSEP, Yuri A. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, v. 125, n. 15, p. 155703-01-155703-06, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5085493. Acesso em: 19 jun. 2024.

    • APA

      Patricio, M. A. T., LaPierre, R. R., & Pusep, Y. A. (2019). Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, 125( 15), 155703-01-155703-06. doi:10.1063/1.5085493

    • NLM

      Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2024 jun. 19 ] Available from: https://doi.org/10.1063/1.5085493

    • Vancouver

      Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2024 jun. 19 ] Available from: https://doi.org/10.1063/1.5085493

  • Artigo de periodico

    Recombination dynamics of Landau levels in an InGaAs/InP quantum well (2018)

    Teodoro, M. D.; Tavares, B. G. M.; Castro, E. D. Guarin; LaPierre, R. R.; Pusep, Yuri A.

    Source: Physical Review B. Unidade: IFSC

    Subjects: POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA

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    • ABNT

      TEODORO, M. D. et al. Recombination dynamics of Landau levels in an InGaAs/InP quantum well. Physical Review B, v. 98, n. 15, p. 155431-1-155431-7, 2018Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.98.155431. Acesso em: 19 jun. 2024.

    • APA

      Teodoro, M. D., Tavares, B. G. M., Castro, E. D. G., LaPierre, R. R., & Pusep, Y. A. (2018). Recombination dynamics of Landau levels in an InGaAs/InP quantum well. Physical Review B, 98( 15), 155431-1-155431-7. doi:10.1103/PhysRevB.98.155431

    • NLM

      Teodoro MD, Tavares BGM, Castro EDG, LaPierre RR, Pusep YA. Recombination dynamics of Landau levels in an InGaAs/InP quantum well [Internet]. Physical Review B. 2018 ; 98( 15): 155431-1-155431-7.[citado 2024 jun. 19 ] Available from: https://doi.org/10.1103/PhysRevB.98.155431

    • Vancouver

      Teodoro MD, Tavares BGM, Castro EDG, LaPierre RR, Pusep YA. Recombination dynamics of Landau levels in an InGaAs/InP quantum well [Internet]. Physical Review B. 2018 ; 98( 15): 155431-1-155431-7.[citado 2024 jun. 19 ] Available from: https://doi.org/10.1103/PhysRevB.98.155431
  • 1

1 - 3 (3 records)

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