High resolution x-ray diffraction analysis of InGaAs/InP superlattices (2006)
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: DIFRAÇÃO POR RAIOS X, ÓPTICA ELETRÔNICA, SEMICONDUTORES, FOTOLUMINESCÊNCIA
ABNT
CORNET, D. M. et al. High resolution x-ray diffraction analysis of InGaAs/InP superlattices. Journal of Applied Physics, v. 100, n. 4, p. 043518-1-043518-6, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2335689. Acesso em: 15 jun. 2024.APA
Cornet, D. M., LaPierre, R. R., Comedi, D., & Pusep, Y. A. (2006). High resolution x-ray diffraction analysis of InGaAs/InP superlattices. Journal of Applied Physics, 100( 4), 043518-1-043518-6. doi:10.1063/1.2335689NLM
Cornet DM, LaPierre RR, Comedi D, Pusep YA. High resolution x-ray diffraction analysis of InGaAs/InP superlattices [Internet]. Journal of Applied Physics. 2006 ; 100( 4): 043518-1-043518-6.[citado 2024 jun. 15 ] Available from: https://doi.org/10.1063/1.2335689Vancouver
Cornet DM, LaPierre RR, Comedi D, Pusep YA. High resolution x-ray diffraction analysis of InGaAs/InP superlattices [Internet]. Journal of Applied Physics. 2006 ; 100( 4): 043518-1-043518-6.[citado 2024 jun. 15 ] Available from: https://doi.org/10.1063/1.2335689